This webpage doesn't work with Internet Explorer. Please use the latest version of Google Chrome, Microsoft Edge, Mozilla Firefox or Safari.
请输入3个以上字符 Search for multiple part numbers fromhere.
The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.
请输入3个以上字符
在此参考设计中,在一个小型印刷电路板(PCB)上实现了具有2个输入和1个输出的电源多路复用器电路。将从东芝的多种产品线选择的MOSFET栅极驱动电路IC、eFuse IC、齐纳二极管和小型封装MOSFET等器件进行组合,实现具有BBM和MBB开关的理想二极管。
Click on components for more details
| 电路 | 双输入单输出电源多路复用器电路 |
|---|---|
| 输入VINA/输入VINB | 5V/20V,5V/12V,9V/20V,5V/12V,12V/24V |
| 输出电流(最大值) | 3A至5A |
Materials for designers, such as an overview of circuit operation and explanations of design considerations. Please click on each tab to view the contents.
Provides circuit data that can be loaded into EDA tools, PCB layout data, and data used in PCB manufacturing. Available in formats from multiple tool vendors. You can freely edit it with your preferred tool.
| 器件型号 | 器件目录 | 搭载部位・数量 | 说明 |
|---|---|---|---|
| 齐纳二极管 | 模组板 | 12V齐纳二极管,SOD-323HE(US2H) | |
| 齐纳二极管 | 模组板 | 16V齐纳二极管,SOD-323HE(US2H) | |
| 齐纳二极管 | 模组板 | 30V齐纳二极管,SOD-323HE(US2H) | |
| 齐纳二极管 | 模组板 | 6.8V齐纳二极管,SOD-323HE(US2H) | |
| 肖特基势垒二极管 | 模组板 | 30V/0.1A肖特基势垒二极管,SOD-962(SL2) | |
| 小信号MOSFET | 模组板 | N沟道MOSFET,30V,0.1A,3.6Ω@4V,CST3C | |
| 小信号MOSFET | 模组板 | N沟道MOSFET,60V,0.15A,3.9Ω@10V,CST3C | |
| 小型低导通电阻MOSFET | 模组板 | N沟道MOSFET,30V,15A,0.0089Ω@10V,SOT-1220(UDFN6B) | |
| 比较器 | 模组板 | 单比较器(CMOS), 5.5V,+/-2.75V,MP6C | |
| L-MOS SHS系列(TC74LCX等效产品) | 模组板 | 单门逻辑(L-MOS),施密特缓冲器,SOT-363(US6) | |
| L-MOS SHS系列(TC74LCX等效产品) | 模组板 | 单门逻辑(L-MOS),反相器,SOT-765(US8) | |
| 负载开关IC | 模组板 | 2.7V至28V外部MOSFET驱动IC,WCSP6E | |
| 负载开关IC | 模组板 | 2.7V至28V外部MOSFET驱动IC,WCSP6E | |
| 负载开关IC | 模组板 | 2.7V至28V外部MOSFET驱动IC,WCSP6G | |
| 负载开关IC | 模组板 | 2.7V至28V外部MOSFET驱动IC,WCSP6G | |
| 负载开关IC | 模组板 | 2.7V至28V外部MOSFET驱动IC,WCSP6G | |
| 负载开关IC | 模组板 | 2.7V至28V外部MOSFET驱动IC,WCSP6G | |
| eFuse IC | 模组板 | 4.4V至13.2V/3.65A eFuse IC,53mΩ,WSON10 | |
| eFuse IC | 模组板 | 4.4V至18V/5.0A eFuse IC,28mΩ,WSON10B | |
| 功率MOSFET(N沟道单型VDSS≤30V) | 模组板 | N沟道MOSFET,30V,0.00065Ω@10V,SOP Advance(N),U-MOSⅨ-H | |
| 功率MOSFET(N沟道单型30V<VDSS≤60V) | 模组板/基板 | N沟道MOSFET,40V,0.00085Ω@10V,SOP Advance(N),U-MOSⅨ-H | |
| 功率MOSFET(N沟道单型VDSS≤30V) | 模组板 | N沟道MOSFET,30V,0.0016Ω@10V,TSON Advance,U-MOSⅨ-H | |
| 负载开关IC | 基板 | 2.7V至28V外部MOSFET驱动IC,WCSP6E | |
| L-MOS SHS系列(TC74LCX等效产品) | 基板 | 单门逻辑(L-MOS),施密特缓冲器,SOT-363(US6) | |
| 点稳压器(单路输出) | 基板 | 200mA固定输出LDO稳压器,4.8V,SOT-25(SMV) | |
| 偏置电阻内置晶体管(BRT) | 基板 | NPN偏置电阻内置晶体管(BRT),1kΩ/10kΩ,SOT-723(VESM) | |
| 偏置电阻内置晶体管(BRT) | 基板 | PNP偏置电阻内置晶体管(BRT),10kΩ/10kΩ,SOT-723(VESM) | |
| 开关二极管 | 基板 | 80V/0.1A开关二极管,SOD-523(ESC) | |
| 低压差(LDO)线性稳压器 | 模组板 | 高电压,低静态电流,快速负载瞬态CMOS线性稳压器 | |
| 低压差(LDO)线性稳压器 | 模组板 | 高电压,低静态电流,快速负载瞬态CMOS线性稳压器 |
We provide materials useful for designing and considering similar circuits, such as application notes for installed products. Please click on each tab to view the contents.