2SC6026MFV

Transistor for low frequency small-signal amplification

  • 相关参考设计(1)

产品概要

Application Scope General-purpose
Polarity NPN
Complementary Product 2SA2154MFV
Comments Rank is specified by hFE range.
RoHS Compatible Product(s) (#) Available

封装

Toshiba Package Name SOT-723 (VESM)
Package Image VESM
JEITA SC-105AA
Package Code SOT-723
Pins 3
Mounting Surface Mount
Width×Length×Height
(mm)
1.2×1.2×0.5
Package Dimensions 查看
Land pattern dimensions 查看
Ultra Librarian® CAD model
(Symbol, Footprint and 3D model)
Download from UltraLibrarian<sup>®</sup> in your desired CAD format<br>(Note1)(Note3)

Download from UltraLibrarian® in your desired CAD format
(Note1)(Note3)

SamacSys CAD model
(Symbol, Footprint and 3D model)
Download from SamacSys<br>(Note2)(Note3)

Download from SamacSys
(Note2)(Note3)

 Please refer to the link destination to check the detailed size.

(Note1)

Ultra Librarian® is a Registered trademark and CAD model library of EMA (EMA Design Automation, Inc.). CAD models (Symbol/Footprint /3D model) are provided by UltraLibrarian®. The footprints are generated based on the specifications of Ultra Librarian®.

(Note2)

SamacSys is a wholly owned subsidiary of Supplyframe, Inc. CAD models (Symbol/Footprint /3D model) are provided by Supplyframe, Inc. The footprints are generated based on the specifications of SamacSys.

(Note3)

Please note that the footprint dimensions may differ from the reference Land Pattern dimensions provided on our website.

绝对最大额定值

项目 符号 单位
Collector Current IC 0.15 A
Collector-emitter voltage VCEO 50 V

电气特性

项目 符号 条件 单位
DC Current Gain hFE (Max) hFE IC=0.002A
VCE=6V
400 -
DC Current Gain hFE (Min) hFE IC=0.002A
VCE=6V
120 -
Collector Emitter Saturation Voltage (Max) VCE(sat) IB=10mA
IC=0.1A
0.25 V
Transition frequency (Min) fT IC=0.001A
VCE=10V
60 MHz
购买及样品申请
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您可以通过以下链接搜索及购买少量样品。

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Sep,2017

Mar,2019

Sep,2024

May,2025

May,2025

(Note)

LTspice ® is a trademark and simulation software of ADI (Analog Devices, Inc.).

可订购器件型号

Orderable part number
(example)
MOQ(pcs) Reliability
Information
RoHS AEC-Q100
AEC-Q101
Note
2SC6026MFV-Y,L3F 8000 Yes - General Use
2SC6026MFVG,L3XG 8000 - Yes Yes (Note) Unintended Use (Note)
2SC6026MFVGR,L3F 8000 Yes - General Use
2SC6026MFVY,L3XG 8000 - Yes Yes (Note) Unintended Use (Note)

(Note):For more information, please contact our sales or use the inquiry form on our website.


参考设计

This is a picture of Gate Drive for SiC MOSFET Module.
SiC MOSFET模块的栅极驱动电路
该参考设计提供了用于驱动工业电机驱动器等功率转换设备中使用的SiC MOSFET模块的栅极。它可以通过使用外部缓冲MOSFET,以大电流驱动SiC MOSFET模块的栅极。

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常见问题

常见问题(FAQ)

Notes

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