SiC MOSFET Modules

Power semiconductors using SiC (silicon carbide), a new material, are superior to Si (silicon) power semiconductors (IGBT) which are currently the mainstream, in high-speed switching propertie and are superior to those used in high-temperature environments. We responded to the need for higher voltage rating and larger current capacity for equipment for industrial applications, such as inverters and converters for railway vehicles, and photovoltaic inverters. And we provides the most suitable devices for low loss and miniaturization.

MG800FXF2YMS3(3300 V/800 A 2in1)

The new product uses highly mounting compatible package named iXPLV (intelligent fleXible Package Low Voltage) to meet the needs for high-efficiency, compact equipment for industrial applications such as inverters and converters for railway vehicles, and renewable energy power generation systems.

MG250YD2YMS3(2200 V/250 A 2in1)

The new modules have mounting compatibility with widely used silicon (Si) IGBT modules. Their low energy loss characteristics meet needs for higher efficiency and size reductions in industrial equipment, such as photovoltaic power systems and energy storage systems.

MG400V2YMS3(1700 V/400 A 2in1)

The new modules have mounting compatibility with widely used silicon (Si) IGBT modules. Their low energy loss characteristics meet needs for higher efficiency and size reductions in industrial equipment, such as converters and inverters for railway vehicles, and renewable energy power generation systems.

MG600Q2YMS3(1200 V/600 A 2in1)

The new modules have mounting compatibility with widely used silicon (Si) IGBT modules. Their low energy loss characteristics meet needs for higher efficiency and size reductions in industrial equipment, such as converters and inverters for industrial equipment, and renewable energy power generation systems.

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