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SiC MOSFET模块的特点
我们的SiC MOSFET模块开发用于铁路车辆的逆变器和转换器、光伏逆变器和工业电机驱动等需要大电流和高电压的应用，它采用我们的第三代SiC MOSFET芯片实现了高可靠性、宽栅极-源极电压范围，高的栅极阈值电压。此外，高耐热性和低电感封装充分实现了SiC的性能。
与竞争产品相比，我们的SiC MOSFET模块具有更宽的栅极-源极电压（VGSS）标准，简化了驱动设计。较高的栅极阈值电压（Vth）规格可防止故障。
我们认识到一个问题，对SiC MOSFET漏极-源极之间的寄生二极管通电会扩大SiC晶体中的缺陷。晶体缺陷的扩大会引起MOSFET导通电阻的波动，也可能导致产品缺陷。我们采用肖特基势垒二极管（SBD）与寄生二极管并联放置在SiC MOSFET内部的结构解决了这个问题。由于SBD内置于MOSFET芯片中，回流时的反向电流将流向SBD以抑制寄生二极管的通电。此外，不操作寄生二极管可以抑制层错增长以降低对于可靠性的不利影响。
| 特性 | 符号 | ||
|---|---|---|---|
| MG800FXF2YMS3 | IGBT模块 | ||
| SiC MOSFET模块 | |||
| 外形尺寸 |
－ | 144mm×100mm | 140mm×130mm |
| 额定电流 |
ID／IC | 800A | 500A |
| 最高通道温度／结温 | Tch／Tj | 175℃ | 150℃ |
| 封装电感 | LSPN | 12nH | 30nH |
为使用SiC MOSFET专门开发的模块比传统的IGBT模块小。此外，高通道温度（TchMax=175℃）和低电感（Lspn=12nH）（注）保证了SiC的高耐热性和高速性能。
（注）MG800FXF2YMS3
| 器件型号 |
生命周期 | 电路配置 |
特性 | VDSS （最大值） （V） |
ID （最大值） （A） |
封装 |
|---|---|---|---|---|---|---|
| MG600Q2YMS3 | 新产品 | 2in1 | 全SiC MOSFET | 1200 | 600 | 标准封装 152mm×62mm |
| MG400V2YMS3 | 新产品 | 1700 | 400 | |||
| MG800FXF2YMS3 | 新产品 | 3300 | 800 | iXPLV 140mm×100mm |
产品阵容包括三种全SiC MOSFET 2in1类型，额定电压范围为1200V至3300V。
我们可以为特定应用提供理想模块。
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