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SiC MOSFET模块的特点

我们的SiC MOSFET模块开发用于铁路车辆的逆变器和转换器、光伏逆变器和工业电机驱动等需要大电流和高电压的应用,它采用我们的第三代SiC MOSFET芯片实现了高可靠性、宽栅极-源极电压范围,高的栅极阈值电压。此外,高耐热性和低电感封装充分实现了SiC的性能。

V<sub>GSS</sub>、V<sub>th</sub>与其他公司产品对比

与竞争产品相比,我们的SiC MOSFET模块具有更宽的栅极-源极电压(VGSS)标准,简化了驱动设计。较高的栅极阈值电压(Vth)规格可防止故障。

MG800FXF2YMS3电路图
MG800FXF2YMS3电路图
典型MOSFE结构
典型MOSFET结构
MOSFET内置SBD结构
MOSFET内置SBD结构

我们认识到一个问题,对SiC MOSFET漏极-源极之间的寄生二极管通电会扩大SiC晶体中的缺陷。晶体缺陷的扩大会引起MOSFET导通电阻的波动,也可能导致产品缺陷。我们采用肖特基势垒二极管(SBD)与寄生二极管并联放置在SiC MOSFET内部的结构解决了这个问题。由于SBD内置于MOSFET芯片中,回流时的反向电流将流向SBD以抑制寄生二极管的通电。此外,不操作寄生二极管可以抑制层错增长以降低对于可靠性的不利影响。

SiC MOSFET模块与IGBT模块对比表
特性 符号
MG800FXF2YMS3 IGBT模块
SiC MOSFET模块
外形尺寸
144mm×100mm 140mm×130mm
额定电流
ID/IC 800A 500A
最高通道温度/结温 Tch/Tj 175℃ 150℃
封装电感 LSPN 12nH 30nH

为使用SiC MOSFET专门开发的模块比传统的IGBT模块小。此外,高通道温度(TchMax=175℃)和低电感(Lspn=12nH)(注)保证了SiC的高耐热性和高速性能。

(注)MG800FXF2YMS3

产品线
器件型号
生命周期 电路配置
特性 VDSS
(最大值)
(V)
ID
(最大值)
(A)
封装
MG600Q2YMS3 开发中
2in1 全SiC MOSFET 1200 600 标准封装
152mm×62mm
MG400V2YMS3 开发中 1700 400
MG800FXF2YMS3 开发中 3300 800 iXPLV
140mm×100mm

产品阵容包括三种全SiC MOSFET 双路类型,额定电压范围为1200V至3300V。
我们可以为特定应用提供理想模块。

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