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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
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东芝SiC MOSFET模块的特点

与IGBT模块相比,SiC MOSFET模块的低损耗特性可以降低总损耗(开关损耗+导通损耗)。高速开关和低损耗操作还有助于减小滤波器、变压器和散热器的尺寸,实现了紧凑、轻便的系统。这降低了逆变器系统的材料成本。此外,无风扇冷却系统的实现提高了可靠性和降低维护成本。

全SiC MOSFET模块和IGBT模块之间的损耗比较

SiC MOSFET模块与IGBT模块的损耗比较
条件:2电平电路Fc=7. 2kHz,Fout=50Hz,Iout=180Arms,Vdc=1090V
与IGBT相比,SiC MOSFET的低损耗特性降低了总损耗。根据上述条件进行估算,损耗减少约80%。

通过比较具有全SiC MOSFET模块的系统和具有IGBT模块的系统的变压器尺寸,可实现 91% 的减少。

通过将分别采用SiC MOSFET模块与采用IGBT模块系统的变压器尺寸进行比较,可实现91%的降低。高速开关和低损耗运行减小了滤波器和变压器以及散热器的尺寸,实现了紧凑、轻便的系统。

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