东芝SiC MOSFET模块的优点
与IGBT模块相比，SiC MOSFET模块的低损耗特性可以降低总损耗（开关损耗+导通损耗）。高速开关和低损耗操作还有助于减小滤波器、变压器和散热器的尺寸，实现了紧凑、轻便的系统。这降低了逆变器系统的材料成本。此外，无风扇冷却系统的实现提高了可靠性和降低维护成本。
SiC MOSFET模块与IGBT模块的损耗比较
条件：2电平电路Fc＝7. 2kHz，Fout＝50Hz，Iout＝180Arms，Vdc＝1090V
与IGBT相比，SiC MOSFET的低损耗特性降低了总损耗。根据上述条件进行估算，损耗减少约80%。
通过将分别采用SiC MOSFET模块与采用IGBT模块系统的变压器尺寸进行比较，可实现91%的降低。高速开关和低损耗运行减小了滤波器和变压器以及散热器的尺寸，实现了紧凑、轻便的系统。
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