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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.
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肖特基势垒二极管(SBD)具有反向恢复时间(trr)短、正向电压(VF)低等优点,但也存在高漏电流大等缺点。东芝推出了采用改进结构的SBD产品。
VF和IR之间的相关性取决于所用的金属。东芝的低IR产品线得益于其结型势垒肖特基(JBS)结构。在JBS二极管中,耗尽区延伸至部分埋在半导体表面下的p和n区之间。这会减少可能存在缺陷的表面上的电场,从而减少漏电流。
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