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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.
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本节介绍如何通过在MOSFET的栅极和源极之间插入ESD保护器来防止静电破坏栅极氧化层。
如果在电路板安装等过程中静电施加到栅极,栅极氧化层可能会遭破坏。在这种情况下,可以通过在栅极与源极端子之间插入ESD保护二极管来保护MOSFET。部分产品采用此措施。它可以在短时间内吸收较大的过电压(浪涌),并且不会将超过一定电压的电压施加与其它半导体产品上。
查阅数据表。
另外,作为安装过程中的对策,请务必将使用的设施和工具(测试设备、工作台、地垫、工具、烙铁等)接地,并防止静电积聚。 人员应穿防静电服、鞋,并用腕带等接地。
相关信息也请参考以下文档。