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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
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1-3-1.正向偏置
在正向偏置中，p型侧比n型侧更加正偏置。当pn结二极管在VF正向偏置时，大部分二极管施加在pn结上，导致扩散电位降低VF。因此，作为n型半导体中的多数载流子的电子从具有较高载流子密度的区域扩散。（同理，空穴是p型半导体中的多数载流子，从载流子密度较高的区域扩散。）电子从偏置注入到n型半导体中以补偿因扩散而减少的电子量，而空穴被注入（即，电子被抽离）p型半导体。因此，电流继续流动。