Full SiC MOSFET 10kW Isolated Bidirectional DC-DC Converter

A reference design for a 10kW isolated bidirectional DC-DC converter employing a Dual Active Bridge (DAB) topology and SiC MOSFETs on both the high-voltage and low-voltage sides.
It provides detailed information including key design points for each circuit block, usage instructions, and adjustment methods, as well as schematic diagrams and PCB layout data, helping support your power electronics designs.

Board Appearance
Board Appearance
TW060N120C TW060N120C TW060N120C TW060N120C TW048N65C TW048N65C TW048N65C TW048N65C TW060N120C TW048N65C TLP7920 TLP5214A

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特点

  • Efficiency: 97.6% (Vin = 750V, 100% load)
  • Topology: Dual Active Bridge (DAB)
  • Dimensions: 565mm × 360mm × 270mm
  • Proposes a total solution combining SiC MOSFETs, smart gate driver couplers, and isolation amplifiers
  • Equipped with our latest-generation SiC MOSFETs
Efficiency Curve
Efficiency Curve

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东芝产品

器件型号 器件目录 搭载部位・数量 说明
Power SiC MOSFETs High-voltage side switch・4 N-ch SiC MOSFET, 1200 V, 0.060 Ω(typ.)@18V, TO-247, 3rd Gen.
Power SiC MOSFETs Low-voltage side switch・4 N-ch SiC MOSFET, 650 V, 0.048 Ω(typ.)@18V, TO-247, 3rd Gen.
Photocoupler (photo-IC output) Gate drive・8 Photocoupler (photo-IC output), IGBT driver, IOP=+/-4.0 A, 5000 Vrms, SO16L
Photocoupler(Isolation Amplifier) Voltage detection・2 Photocoupler(Isolation Amplifier), Analog output, 5000 Vrms, DIP8

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