TK6A80E

不推荐用于新设计

Power MOSFET (N-ch 700V<VDSS)

数据表

TK6A80E 数据表/日文[Mar,2014]PDF: 372KB

数据表

TK6A80E 数据表/英文[Mar,2014]PDF: 295KB

Simulation Model

PSpice Model[Nov,2014]lib: 3KB

Simulation Model

LTspice Model[Feb,2019]mod: 20KB

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Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system[Sep,2020]PDF: 1517KB

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U-MOSⅨ-H 60V Low VDS spike TPH1R306P1[Aug,2019]PDF: 1081KB

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Hints and Tips for Thermal Design part3[Feb,2019]PDF: 3165KB

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Reverse Recovery Operation and Destruction of MOSFET Body Diode[Sep,2018]PDF: 472KB

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Structures and Characteristics: Power MOSFET Application Notes[Jul,2018]PDF: 331KB

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Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes[Jul,2018]PDF: 1077KB

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MOSFET Avalanche Ruggedness: Power MOSFET Application Notes[Jul,2018]PDF: 616KB

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Hints and Tips for Thermal Design for Discrete Semiconductor Devices[Jul,2018]PDF: 1266KB

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Catalog

Selection Guide MOSFETs 2026 Rev1.0[Feb,2026]PDF: 4223KB

数据表

TK6A80E 数据表/日文[Mar,2014]PDF: 372KB

数据表

TK6A80E 数据表/英文[Mar,2014]PDF: 295KB

相关技术数据

MOSFET SPICE model grade[May,2023]PDF: 1639KB

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Electrical Characteristics: Power MOSFET Application Notes[Feb,2023]PDF: 1266KB

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Simplified CFD Model Application Note[Nov,2022]PDF: 993KB

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Efficiency Evaluation and Loss Analysis of 300W isolated DC-DC converter[Sep,2021]PDF: 2324KB

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Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2[Dec,2020]PDF: 3593KB

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Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system[Sep,2020]PDF: 1517KB

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Avalanche energy calculation[Mar,2020]PDF: 562KB

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Quick Reference Guide for Thermal Design for Discrete Semiconductor Devices[Feb,2020]PDF: 2104KB

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Resonant Circuits and Soft Switching[Nov,2019]PDF: 1071KB

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Power Factor Correction (PFC) Circuits: Power MOSFET Application Notes[Nov,2019]PDF: 1061KB

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U-MOSⅨ-H 60V Low VDS spike TPH1R306P1[Aug,2019]PDF: 1081KB

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Hints and Tips for Thermal Design part3[Feb,2019]PDF: 3165KB

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Reverse Recovery Operation and Destruction of MOSFET Body Diode[Sep,2018]PDF: 472KB

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MOSFET Secondary Breakdown[Sep,2018]PDF: 450KB

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RC Snubbers for Step-Down Converters[Sep,2018]PDF: 1846KB

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Structures and Characteristics: Power MOSFET Application Notes[Jul,2018]PDF: 331KB

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Maximum Ratings: Power MOSFET Application Notes[Jul,2018]PDF: 705KB

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Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes[Jul,2018]PDF: 848KB

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Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes[Jul,2018]PDF: 789KB

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Parasitic Oscillation and Ringing: Power MOSFET Application Notes[Jul,2018]PDF: 1394KB

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Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes[Jul,2018]PDF: 1178KB

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MOSFET Gate Drive Circuit: Power MOSFET Application Notes[Jul,2018]PDF: 1215KB

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Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes[Jul,2018]PDF: 1077KB

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MOSFET Avalanche Ruggedness: Power MOSFET Application Notes[Jul,2018]PDF: 616KB

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Hints and Tips for Thermal Design for Discrete Semiconductor Devices[Jul,2018]PDF: 1266KB

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Calculating the Temperature of Discrete Semiconductor Devices[Jul,2018]PDF: 965KB

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Derating of the MOSFET Safe Operating Area[Jul,2018]PDF: 656KB

相关技术数据

MOSFET Self-Turn-On Phenomenon[Jul,2018]PDF: 1338KB

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Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2[Jul,2018]PDF: 1069KB

相关技术数据

Motor Control (Vacuum Cleaners)[Jul,2018]PDF: 2483KB

Simulation Model

PSpice Model[Nov,2014]lib: 3KB

Simulation Model

LTspice Model[Feb,2019]mod: 20KB

Catalog

Selection Guide MOSFETs 2026 Rev1.0[Feb,2026]PDF: 4223KB

产品概要

Application Scope Switching Voltage Regulators
Polarity N-ch
Generation π-MOSⅧ
Internal Connection Single
RoHS Compatible Product(s) (#) Available

封装

Toshiba Package Name TO-220SIS
Package Image 东芝 TK6A80E Power MOSFET (N-ch 700V&lt;VDSS)产品 TO-220SIS 封装图片
JEITA SC-67
Pins 3
Mounting Through Hole
Width×Length×Height
(mm)		 10.0×15.0×4.5
Package Dimensions 查看
Ultra Librarian® CAD model
(Symbol, Footprint and 3D model)		 Download from UltraLibrarian<sup>®</sup> in your desired CAD format<br>(Note1)(Note2)

Download from UltraLibrarian® in your desired CAD format
(Note1)(Note2)

 Please refer to the link destination to check the detailed size.

(Note1)

Ultra Librarian® is a Registered trademark and CAD model library of EMA (EMA Design Automation, Inc.). CAD models (Symbol/Footprint /3D model) are provided by UltraLibrarian®. The footprints are generated based on the specifications of Ultra Librarian®.

(Note2)

Please note that the footprint dimensions may differ from the reference Land Pattern dimensions provided on our website.

绝对最大额定值

项目 符号 值 单位
Drain-Source voltage VDSS 800 V
Gate-Source voltage VGSS +/-30 V
Drain current ID 6.0 A
Power Dissipation PD 45 W

电气特性

项目 符号 条件 值 单位
Gate threshold voltage (Max) Vth - 4.0 V
Gate threshold voltage (Min) Vth - 2.5 V
Drain-Source on-resistance (Max) RDS(ON) |VGS|=10V 1.7 Ω
Input capacitance (Typ.) Ciss - 1350 pF
Total gate charge (Typ.) Qg VGS=10V 32 nC
Reverse recovery time (Typ.) trr - 1100 ns
Reverse recovery charge (Typ.) Qrr - 8000 nC

文档

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Nov,2014

Feb,2019

(Note)

LTspice ® is a trademark and simulation software of ADI (Analog Devices, Inc.).

应用

空调
电机驱动效率、低功耗和小型化等对于空调的设计非常重要。东芝公司提供了适用于功率控制单元、电机驱动单元、控制单元、传感器信号输入单元等的各种半导体产品的信息以及电路配置示例。
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