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近年来,MOSFET的使用比双极结型晶体管(BJT)更频繁。 这是因为MOSFET通常不需要驱动电流并且易于操作。然而,BJT用于放大器、振荡器、低电压开关等。
这是因为BJT具有更高的增益(hFE)*、更好的线性度、更好的1/f噪声,并且可以通过在基极和发射极之间施加约0.7 V的电压来导通。 此外,由于BJT具有高抗静电(ESD)能力,因此有时会在干扰较大的环境中使用。
使用BJT的示例电路如下所示。
*hFE随集电极-发射极电压而变化,具体取决于外部电路。
关于hFE的说明,另见常见问题(FAQ):“双极晶体管(BJT)的基极电流和集电极电流之间有什么关系?”
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