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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
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以下是NPN晶体管的电气特性表示例
特性 | 符号 | 测试条件 | 最小值 | 典型值 | 最大值 | 单位 |
---|---|---|---|---|---|---|
1. 集电极截止电流 | ICBO | VCB=60V,IE=0 | - | - | 0.1 | μA |
2.发射极截止电流 | IEBO | VEB=5V,IC=0 | - | - | 0.1 | μA |
3.直流电流增益 | hFE(1)(注) | VCE=6V,IC=2mA | 70 | - | 700 | |
hFE(2) | VCE=6V,IC=150mA | 25 | 100 | - | ||
4.集电极-发射极饱和电压 | VCE(SAT) | IC=100mA,IB=10mA | - | 0.1 | 0.25 | V |
5.基极-发射极饱和电压 | VBE(SAT) | IC=100mA,IB=10mA | - | - | 1.0 | V |
特征频率 | fT | VCE=10V,IC=1mA | 80 | - | - | MHz |
集电极输出电容 | Cob | VCB=10V,IE=0,f=1MHz | - | 2.0 | 3.5 | pF |
与基极串联的电阻器 | rbb | VCE=10V,IE=-1mA,f=30MHz | - | 50 | - | Ω |
噪声系数 | NF | VCE=6V,IC=0.1mA,f=1kHz,RG=10kΩ | - | 1 | 10 | dB |
测量ICBO
2. 发射极截止电流
测量IEBO
3. 直流电流增益
测量直流电流增益hFE
增加基极-发射极电压(VBE)直至集电极电流(IC)达到指定值。调整VBE以保持IC恒定并测量基极电流(IB)。计算直流电流增益(hFE),如下所示:
hFE=IC/IB
直流电流增益(hFE)曲线示例
4. 集电极-发射极饱和电压
测量集电极-发射极饱和电压,VCE(sat)
施加规定的恒定集电极电流(IC)以增加基极-发射极电压(VBE),直至基极电流(IB)达到指定值。调整IC以保持IB恒定并测量集电极-发射极电压。
5. 基极-发射极饱和电压
测量基极-发射极饱和电压VBE(sat)
施加规定的恒定集电极电流(IC)以增加基极-发射极电压(VBE)直至基极电流(IB)达到指定值。调整IC以保持IB恒定并测量基极-发射极电压。
注:保持恒流源的开路电压低于集电极-发射极击穿电压。
集电极-发射极饱和电压(VCE(sat))曲线示例