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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
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我们将以N通道MOSFET为例进行解释。
确认控制信号电压Vdrive是否接近GND。
当电压不接近GND时,栅极驱动电路的输出阻抗可能很高。考虑降低输出阻抗。
确认栅极源极电压VGS是否与控制信号相同。如果不同,在栅极和源极之间插入下拉电阻Rpull以确保栅极-源极电压VGS达到GND电平。
请选择不会影响栅极驱动性能的Rpull。
关于MOSFET驱动,请参考“MOSFET栅极驱动电路:功率MOSFET应用说明”