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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.

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串联栅极电阻如何影响MOSFET?

当使用较小的栅极电阻时,开关时间变短,可能会发生振铃(阻尼振荡)。
振铃将导致振荡和EMI噪声。
当使用更大的栅极电阻时,开关时间变长。
结果导致开关损耗增加和热量产生。
在桥式电路中,因结合栅极电阻,上下MOSFET之间可能发生短路。
因此,有必要考虑最佳的栅极电阻。


关于MOSFET驱动电路,请参考“MOSFET Gate Date Circuit:Power MOSFET Application Notes

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