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MOSFET的电气特性（静态特性IGSS／IDSS／V(BR)DSS／V(BR)DXS）
栅极漏电流（IGSS）
当在漏极和源极短路的情况下在栅极和源极之间施加指定电压时产生的漏电流
IGSS测量
漏极截止电流（IDSS）
当在栅极和源极短路的情况下在漏极与源极之间施加指定电压时产生的漏电流
IDSS测量
漏源击穿电压（V(BR)DSS／V(BR)DXS）
保证器件在漏极与源极之间阻断的最大电压
V (BR)DSS：在栅极和源极短路的情况下
V (BR)DSX：在栅极和源极反向偏置的情况下
V(BR)DSS测量
V(BR)DSX测量
数据表说明
| 特性 | 符号 | 测试条件 | 最小值 | 典型值 | 最大值 | 单位 |
|---|---|---|---|---|---|---|
| 栅极漏电流 | IGSS | VGS＝±20V，VDS＝0V | — | — | ±0.1 | µA |
| 漏极截止电流 | IDSS | VDS＝40V，VGS＝0V | — | — | 10 | |
| 漏源击穿电压 | V(BR)DSS | ID＝10mA，VGS＝0V | 40 | — | — | V |
| V(BR)DSX | ID＝10mA，VGS＝-20V | 25 | — | — |