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About information presented in this cross reference

The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.

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eFuse IC(电子保险丝/熔断器)的过流保护工作原理是什么?

我们的eFuse IC的过流保护有两种保护操作方法。
请根据系统需求进行选择。下图显示了TCKE8系列的操作示例。详见各数据表。

  • 自动重试型
    当电流超过过流限制ILIM时,通过ILIM限制流经eFuse IC并进入内部MOSFET的电流。
    此时,eFuse IC产生功耗PD=(VIN-VOUT) ×ILIM,结温升高,从而进入热关断操作并关断MOSFET。
    MOSFET关断后,结温降低,随后MOSFET再次导通。如果过流情况未解决,ILIM会限流,然后再次执行热关断操作。

  • 锁存型
    与自动重试型一样,当发生过流时,通过ILIM确定的电流限制流经MOSFET的电流后,eFuse IC进入热关断模式并关断MOSFET。
    锁存型使MOSFET保持关断状态。
    如欲解除锁存状态,当过流状态解除后,将EN/UVLO引脚的电压设为低电平,然后再将其设为高电平。
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