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半导体器件功率耗散时结点温度的计算方法
当功率在半导体器件中耗散时，结点温度升高。
温升ΔTj如下所示
ΔTj[deg.C]＝ Rth [deg.C／W] × PLOSS[W]
ΔTj：结点温升
Rth:热阻
PLOSS：半导体器件中的耗散功率
结点温度如下所示：
Tj = ΔTj + Ta
Tj：结点温度
Ta：环境温度
＊在双极晶体管中，Tj表示结点温度。
在MOSFET中，用Tch代替Tj，表示结温。
关于结点温度的计算，请参考“散热片的热设计和安装： 功率MOSFET应用说明