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3-7.漏电流
当向势垒施加正向偏置时，扩散电位下降。因此，半导体导带中的电子穿过耗尽区扩散到金属，导致从金属到半导体出现正向电流。当半导体中的绝大多数载流子密度变得高于金属中的绝大多数载流子密度时，即会发生载流子扩散。因此，电子从半导体扩散到金属，导致电流流动。
当反向偏置在扩散电位以上的范围内时，金属的载流子密度变得高于半导体的载流子密度，导致电流反向流动。这种电流称为漏电流。由于SBD在高于扩散电位的能级处具有低载流子密度，因此漏电流的大小远远低于正向电流的大小。
由于SBD的扩散电位低于pn结二极管的扩散电位，因此电流开始以低于pn结二极管的电压流过SBD。SBD倾向于表现出更高的漏电流，因为其晶体结构倾向于会在金属和半导体的异质结处受到干扰。
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