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具有MOSFET栅极驱动IC和N沟道MOSFET的负载开关电路示例
东芝的栅极驱动电路IC与MOSFET组合后，实现了具有保护功能的平滑导通和关断负载开关。利用共漏极MOSFET，该解决方案实现了具有反向电流阻断功能的小型低损耗输电线。
下面显示了TCK425G与SSM10N954L在5V输电线中的组合示例。
| 器件型号 | 特性 |
|---|---|
| TCK425G | 过压保护MOSFET栅极驱动IC 栅极-源极电压：VGS＝5.6V（典型值） 过压锁定：VIN_OVLO＝6.31V（典型值） 封装：WCSP6G |
| SSM10N954L | 共漏极N沟道MOSFET 源极-源极电压：VSSS＝12V（最大值） 栅极-源极电压：±8V（最大值） 源极-源极导通电阻：当VGS＝4.5V时，为2.1mΩ（典型值） 封装：TCSPAC-153001 |
无任何浪涌电流、输出电压过冲和欠冲的平滑导通和关断波形。
集成了过压锁定（OVLO）功能，可保护过压电源。当输入电压超过OVLO阈值时，OVLO功能会立即关闭输出。当输入电压降至OVLO阈值以下之后，输出开启。
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