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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
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具有MOSFET栅极驱动IC和N沟道MOSFET的负载开关电路示例

东芝的栅极驱动电路IC与MOSFET组合后,实现了具有保护功能的平滑导通和关断负载开关。利用共漏极MOSFET,该解决方案实现了具有反向电流阻断功能的小型低损耗输电线。

下面显示了TCK425G与SSM10N954L在5V输电线中的组合示例。

下面显示了TCK425G与SSM10N954L在5V输电线中的组合示例。

器件型号 特性
TCK425G 过压保护MOSFET栅极驱动IC
栅极-源极电压:VGS=5.6V(典型值)
过压锁定:VIN_OVLO=6.31V(典型值)
封装:WCSP6G
SSM10N954L 共漏极N沟道MOSFET
源极-源极电压:VSSS=12V(最大值)
栅极-源极电压:±8V(最大值)
源极-源极导通电阻:当VGS=4.5V时,为2.1mΩ(典型值)
封装:TCSPAC-153001
导通和关断波形

无任何浪涌电流、输出电压过冲和欠冲的平滑导通和关断波形。

过压锁定波形

集成了过压锁定(OVLO)功能,可保护过压电源。当输入电压超过OVLO阈值时,OVLO功能会立即关闭输出。当输入电压降至OVLO阈值以下之后,输出开启。

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