TPCP8405

不推荐用于新设计

Power MOSFET (N-ch + P-ch complementary)

数据表

TPCP8405 数据表/日文[Oct,2015]PDF: 499KB

数据表

TPCP8405 数据表/英文[Oct,2015]PDF: 378KB

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数据表

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数据表

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产品概要

Application Scope Mobile Equipments / Motor Drivers
Polarity N-ch + P-ch
Generation U-MOSⅥ-H / U-MOSⅥ
Internal Connection Independent
RoHS Compatible Product(s) (#) Available

封装

Toshiba Package Name PS-8
Package Image 东芝 TPCP8405 Power MOSFET (N-ch + P-ch complementary)产品 PS-8 封装图片
Pins 8
Mounting Surface Mount
Width×Length×Height
(mm)		 2.9×2.8×0.8
Package Dimensions 查看
Land pattern dimensions 查看

 Please refer to the link destination to check the detailed size.

绝对最大额定值

项目 符号 值 单位
Drain-Source voltage (Q1) VDSS 30 V
Gate-Source voltage (Q1) VGSS +/-20 V
Drain current (Q1) ID 6.5 A
Drain-Source voltage (Q2) VDSS -30 V
Gate-Source voltage (Q2) VGSS +/-20 V
Drain current (Q2) ID -6.0 A
Power Dissipation PD 1.48 W

电气特性

项目 符号 条件 值 单位
Gate threshold voltage (Q1) (Max) Vth - 2.3 V
Drain-Source on-resistance (Q1) (Max) RDS(ON) VGS=4.5V 29 mΩ
Drain-Source on-resistance (Q1) (Max) RDS(ON) VGS=10V 26 mΩ
Input capacitance (Q1) (Typ.) Ciss - 830 pF
Total gate charge (Q1) (Typ.) Qg VGS=10V 13.8 nC
Gate threshold voltage (Q2) (Max) Vth - -2.0 V
Drain-Source on-resistance (Q2) (Max) RDS(ON) VGS=-10V 31.3 mΩ
Drain-Source on-resistance (Q2) (Max) RDS(ON) VGS=-4.5V 42 mΩ
Input capacitance (Q2) (Typ.) Ciss - 1075 pF
Total gate charge (Q2) (Typ.) Qg VGS=-10V 24.1 nC

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