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About information presented in this cross reference

The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.

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车载MOSFET的封装趋势

封装技术趋势

功率MOSFET封装技术趋势

封装尺寸/安装面积(㎟)

DPAK+、DSOP Advance(WF)、SOP Advance(WF)和TSON Advance(WF)采用铜连接器结构,实现了大约两倍于传统型号的载流能力。此外,新开发的S-TOGL™和L-TOGL™采用了Cu clip结构(无接线柱结构)和多引脚结构,这是铜连接器结构的进化,实现更大的电流,使性能的进一步提升。
我们正在扩大我们的产品线,以满足车载应用的不同需求。

小封装技术趋势

小封装封装技术趋势

小型MOSFET提供了广泛的击穿电压和驱动电压范围,涵盖小信号到中功率类型。封装尺寸有多种选择,从1mm×1mm超级小封装到3mm×3mm,通过减少安装面积促进设备小型化。

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