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About information presented in this cross reference

The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.

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查找您下一个设计所需要的一切。只需选择一个应用,然后单击以查看框图,即可找到我们的半导体解决方案。

先进的双扩散MOSFET(D-MOS)π-MOSIX系列产品

低噪声

π-MOS系列采用D-MOS(双扩散MOS)结构,且该系列提供从200V到900V的宽电压范围,其中我们提供最新的第九代π-MOSⅨ系列600V耐压产品。
π-MOSⅨ系列能够取代市场上较为普遍的传统的600V MOSⅦ系列产品。我们优化了双扩散结构的设计,实现了高效率、低噪声和高雪崩性能。

通过优化芯片设计,我们的π-MOSⅨ系列能够达到与传统π-MOSⅦ系列和竞争对手同类产品相同的功率转换效率水平,同时降低EMI噪声。因此,在设计诸如适配器之类的开关电源时,可以在不改变MOSFET以外的外围部件的情况下获得与传统产品相同的特性,从而轻松替换传统产品。

65W笔记本电脑电源适配器的电磁干扰(辐射)噪声/纵向
65W笔记本电脑电源适配器的电磁干扰(辐射)噪声/横向

在评估65W笔记本电脑电源适配器的电磁干扰(辐射)噪声时,与我们传统的π-MOSⅦ系列同等产品TK10A60D(600V/0.75Ω最大值/TO-220SIS封装)相比,π-MOSⅨ系列的TK750A60F在不改变MOSFET外围电路参数(漏源间电容、栅极串联电阻等)的情况下降低了辐射噪声。

电路仿真

利用开关电源选型工具库(SMPS Lib.),您可以根据实际需求选择和下载电源单元的各种基本拓扑,以便在仿真环境中验证MOSFET的性能。  

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