DTMOSⅥ 600V N-Channel Power MOSFET in TO-247-4L(X) Package Helps Improve Efficiency of Switched-Mode Power Supplies for Industrial Equipment

DTMOSⅥ 600V N-Channel Power MOSFET in TO-247-4L(X) Package Helps Improve Efficiency of Switched-Mode Power Supplies for Industrial Equipment

Toshiba Electronic Devices & Storage Corporation ("Toshiba") has launched six products featuring the DTMOSⅥ 600V series N-channel power MOSFET chips, mounted in a four-pin TO-247-4L(X) package to reduce switching loss. These devices are suitable for servers in data centers, switched-mode power supplies for industrial equipment, and power conditioners for photovoltaic generators.

By optimizing the gate design and process, the DTMOSⅥ 600V series, which includes the new products, has reduced the value of drain-source On-resistance×gate-drain charge―the figure of merit for MOSFET performance―by approximately 52% compared to Toshiba's existing DTMOSⅣ-H series products with the same drain-source voltage ratings.

The new products feature the four-pin TO-247-4L(X) package with a signal source terminal for gate drive. Compared to the three-pin TO-247 package, the TO-247-4L(X) package allows for Kelvin connection of the signal source terminal for gate drive, reducing the influence of the inductance of the source wire inside the package. This enhances high-speed switching performance and helps improve the high efficiency of uninterruptible power supplies (UPS), photovoltaic inverters, and more.

Toshiba also offers tools that support circuit design. Alongside the G0 SPICE model, which verifies circuit function in a short time, highly accurate G2 SPICE models that accurately reproduce transient characteristics are now available.

Toshiba will continue to expand the DTMOSⅥ 600V series lineup to enhance the efficiency of switched-mode power supplies for industrial equipment, aiming to achieve carbon neutrality.

特点

  1. Low RDS(ON)×Qgd (drain-source On-resistance×gate-drain charge) and high efficiency of switched-mode power supplies
  2. Four-pin TO-247-4L(X) package adopted: Reduces switching loss by adding a signal source terminal for gate drive

Features Explanation

1. Low RDS(ON)×Qgd (drain-source On-resistance×gate-drain charge) and high efficiency of switched-mode power supplies

By optimizing the gate design and process, the DTMOSⅥ 600V series products have reduced the value of drain-source On-resistance per unit area by approximately 13%, gate-drain charge by approximately 45%, and drain-source On-resistance×gate-drain charge ―the figure of merit for MOSFET performance― by approximately 52% compared to Toshiba's existing DTMOSⅣ-H series products with the same drain-source voltage rating. This means the DTMOSⅥ series has a better trade-off between conduction loss and switching loss, which helps improve the efficiency of switched-mode power supplies.

Figure 1.  Comparison of drain-source On-resistance and gate-drain charge
Figure 1. Comparison of drain-source On-resistance and gate-drain charge[1]

Note:
[1] Values measured by Toshiba.

2. Four-pin TO-247-4L(X)[2] package adopted: Reduces switching loss by adding a signal source terminal for gate drive

In the case of a three-pin type package, as shown in Figure 2., when the gate drive voltage VDRV is applied, the inductance component LS of the source wire and the gradient dID/dt component of the drain current ID generate a counter electromotive voltage VLS. Therefore, the gate drive voltage VDRV is reduced by the generated counter electromotive voltage VLS. Thus, the voltage VGS applied between the gate and source of the FET chip is the gate drive voltage VDRV reduced by the counter electromotive voltage VLS. This slows down the switching speed of the MOSFET.

Figure 2.  Voltage drop analysis of the gate drive circuit in a three-pin package (TO-247)
Figure 2. Voltage drop analysis of the gate drive circuit in a three-pin package (TO-247)

On the other hand, in the case of a four-pin type package, as shown in Figure 3., the effect of counter electromotive voltage VLS is reduced by connecting the signal source terminal for gate drive close to the FET chip. As a result, in the four-pin type package, the voltage VGS applied between the gate and source and the gate drive voltage VDRV are approximately the same value, improving the switching speed of the MOSFET compared to the three-pin type package.

Figure 3.  Voltage drop analysis of the gate drive circuit in a four-pin package (TO-247-4L(X))
Figure 3. Voltage drop analysis of the gate drive circuit in a four-pin package (TO-247-4L(X))

Note:
[2] The appearance and dimensions of the TO-247-4L(X) package differ from Toshiba’s existing four-pin package, the TO-247-4L. Please note that there is a dimensional difference of more than 10% in the arrowed parts of the diagram below. For details, please refer to the links for each package.

Outline Drawing of TO-247-4L and TO-247-4L(X)

应用

  • Switched-mode power supplies (for data center servers, etc.)
  • Power conditioners for photovoltaic generators
  • Uninterruptible power supply

Main Specifications

(Unless otherwise specified, Ta=25°C)

Part number Package Absolute maximum ratings Electrical characteristics Sample check & availability
Drain-source voltage
VDSS
(V)
Drain current (DC)
ID
(A)
Drain-source On-resistance
RDS(ON)
(mΩ)
Total gate charge
Qg
(nC)
Gate-drain charge
Qgd
(nC)
Input capacitance
Ciss
(pF)
Reverse recovery time
trr
(ns)
Tc=25°C VGS=10V VGS=10V VGS=10V VDS=300V VDD=400V,
-dIDR/dt
=100A/μs
Typ. Typ. Typ. Typ. Typ.
TK125Z60Z1 TO-247-4L(X) 600 20 105 28 8 1620 285 Buy Online
TK099Z60Z1 25 83 36 10 2050 297 Buy Online
TK080Z60Z1 30 67 43 12 2510 345 Buy Online
TK063Z60Z1 37 53 56 15 3200 350 Buy Online
TK040Z60Z1 52 33 85 22 5200 380 Buy Online
TK024Z60Z1 80 20 140 37 8420 425 Buy Online

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