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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.
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随着信息社会的到来与发展,每天处理的信息量急剧增加,数据中心以及信息和通信设备的耗电量的不断增加已成为全球关注的问题。因此,近年来,对于高效率开关电源(SMPS)的需求也在不断增加,以满足数据中心以及信息和通信设备的供电需求。
开关电源中的MOSFET损耗分为导通损耗和开关损耗,新一代DTMOSVI 650V系列主要用于减少开关损耗,特别是通过加快从导通到关断的开关速度来降低损耗。与上一代产品相比,新产品的“漏源导通电阻×栅漏电荷”值降低了40%左右[注1],因此,开关电源的效率提高了0.36%左右[注2]。
TOLL是一种贴片式封装,其占用空间比通用D2PAK封装小27%左右。它还是一个4引脚封装,支持在其信号源端进行开尔文连接,以实现栅极驱动。这样可减少封装中源极线电感的影响,发挥MOSFET的高速开关性能,抑制开关震荡。
东芝将继续扩大产品线,以满足市场发展的需求和提高电源效率。
[注1]新一代DTMOSVI的“漏源导通电阻x栅漏电荷”有几种形式:从40mΩ×27nC到210mΩ×7.1nC。可根据应用和设计理念选择合适的器件及各种封装种类。
[注2]截至2021年7月的东芝测量值(通过使用输出功率为2500W的PFC电路对新一代TK040N65Z与传统TK62N60X进行比较)
* 产品名称下括号内的数值为RDS(ON)最大值/ID最大值
封装 |
Qgd 典型值 (nC) |
||||
---|---|---|---|---|---|
8.0×8.0×0.85 |
10.0×15.0×4.5 |
15.94×20.95×5.02 |
15.94×20.95×5.0 |
9.9×11.68×2.3 |
|
TK210V65Z |
TK190A65Z |
TK190U65Z (0.19Ω/15A) |
7.1 |
||
TK170V65Z |
TK155A65Z |
TK155U65Z (0.155Ω/18A) |
8 |
||
TK125V65Z |
TK110A65Z |
TK110N65Z |
TK110Z65Z |
TK110U65Z (0.11Ω/24A) |
11 |
TK099V65Z |
TK090A65Z |
TK090N65Z |
TK090Z65Z |
TK090U65Z (0.09Ω/30A) |
12 |
TK065N65Z |
TK065Z65Z |
TK065U65Z (0.065Ω/38A) |
17 |
||
TK040N65Z |
TK040Z65Z |
27 |