新型TO-247-4L封装600V超结功率MOSFET（DTMOSⅣ-H系列）的商业化
四引脚TO-247-4L封装采用Kelvin连接的信号源端子进行栅极驱动，可以降低封装内电源线电感的影响，从而进一步提高MOSFET芯片的高速开关性能。
这有助于提高大中型高效率开关电源的效率（相当于80PLUS※1 的钛金／铂金级电源效率）。
※1：基于电源效率80%或以上的AC-DC转换，提出了电源节能指令80PLUS
TO-247-4L封装的优点
随着DTMOS速度和电流的增加，封装内电源线的电感分量将影响封装的高速开关能力。通过提供用于栅极驱动的信号源端子，可以分离电源线中的电流和栅极驱动线中的电流，以减小栅源电压电感的影响。
对于>3引脚的封装（TO-247）
反电动势VLS（＝LS*dID/dt）由源极电源线的电感分量L和漏极电流斜率dI dID/dt产生，电压VGS的是施加在FET芯片的栅极和源极漏极。这个反电动势将实际施加的电压从设定的栅极电压降低，且开关速度特别是开通速度将会减慢。
对于>4引脚的封装（TO-247-4L）
移动驱动侧的源端，使其从靠近场效应晶体管芯片的位置，与负载侧的源线分离，这样使其不易受到驱动电压的影响。这就提高了FET芯片的高速开关性能。
通过TO-247-4L降低开通损耗
当我们观察MOS附近的栅源电压波形时，我们证实通过L源缩短了TO-247-4L封装的工作时间。在实际测量中，我们确认TO-247-4L封装（器件型号：TK62Z60X）的开通损耗比TO-247封装（器件型号：TK62N60X)的接通损失减少了19%。
对于降低开通损耗的效果，我们在仿真和实际测量中都证实了开关速度的提高。
TO-247-4L封装的MOSFET
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