TPH1R906PU

新产品

Power MOSFET (N-ch single 30V<VDSS≤60V)

数据表

TPH1R906PU 数据表/日文[Jan,2026]PDF: 1019KB

数据表

TPH1R906PU 数据表/英文[Jan,2026]PDF: 920KB

Simulation Model

PSpice Model[Apr,2026]ZIP: 42KB

Simulation Model

LTspice Model[Apr,2026]ZIP: 49KB

Simulation Model

SIMetrix Model[Apr,2026]ZIP: 10KB

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Hints and Tips for Thermal Design part3[Feb,2019]PDF: 3165KB

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Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes[Jul,2018]PDF: 1077KB

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MOSFET Avalanche Ruggedness: Power MOSFET Application Notes[Jul,2018]PDF: 616KB

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Hints and Tips for Thermal Design for Discrete Semiconductor Devices[Jul,2018]PDF: 1266KB

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Catalog

Selection Guide MOSFETs 2026 Rev1.0[Feb,2026]PDF: 4223KB

数据表

TPH1R906PU 数据表/日文[Jan,2026]PDF: 1019KB

数据表

TPH1R906PU 数据表/英文[Jan,2026]PDF: 920KB

相关技术数据

MOSFET SPICE model grade[May,2023]PDF: 1639KB

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Electrical Characteristics: Power MOSFET Application Notes[Feb,2023]PDF: 1266KB

相关技术数据

Simplified CFD Model Application Note[Nov,2022]PDF: 993KB

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Efficiency Evaluation and Loss Analysis of 300W isolated DC-DC converter[Sep,2021]PDF: 2324KB

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Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2[Dec,2020]PDF: 3593KB

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Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system[Sep,2020]PDF: 1517KB

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Avalanche energy calculation[Mar,2020]PDF: 562KB

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Quick Reference Guide for Thermal Design for Discrete Semiconductor Devices[Feb,2020]PDF: 2104KB

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Resonant Circuits and Soft Switching[Nov,2019]PDF: 1071KB

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U-MOSⅨ-H 60V Low VDS spike TPH1R306P1[Aug,2019]PDF: 1081KB

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Hints and Tips for Thermal Design part3[Feb,2019]PDF: 3165KB

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Reverse Recovery Operation and Destruction of MOSFET Body Diode[Sep,2018]PDF: 472KB

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MOSFET Secondary Breakdown[Sep,2018]PDF: 450KB

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RC Snubbers for Step-Down Converters[Sep,2018]PDF: 1846KB

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Structures and Characteristics: Power MOSFET Application Notes[Jul,2018]PDF: 331KB

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Maximum Ratings: Power MOSFET Application Notes[Jul,2018]PDF: 705KB

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Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes[Jul,2018]PDF: 848KB

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Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes[Jul,2018]PDF: 789KB

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Parasitic Oscillation and Ringing: Power MOSFET Application Notes[Jul,2018]PDF: 1394KB

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Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes[Jul,2018]PDF: 1178KB

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MOSFET Gate Drive Circuit: Power MOSFET Application Notes[Jul,2018]PDF: 1215KB

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Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes[Jul,2018]PDF: 1077KB

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MOSFET Avalanche Ruggedness: Power MOSFET Application Notes[Jul,2018]PDF: 616KB

相关技术数据

Hints and Tips for Thermal Design for Discrete Semiconductor Devices[Jul,2018]PDF: 1266KB

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Calculating the Temperature of Discrete Semiconductor Devices[Jul,2018]PDF: 965KB

相关技术数据

Derating of the MOSFET Safe Operating Area[Jul,2018]PDF: 656KB

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MOSFET Self-Turn-On Phenomenon[Jul,2018]PDF: 1338KB

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Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2[Jul,2018]PDF: 1069KB

相关技术数据

Motor Control (Vacuum Cleaners)[Jul,2018]PDF: 2483KB

Simulation Model

PSpice Model[Apr,2026]ZIP: 42KB

Simulation Model

LTspice Model[Apr,2026]ZIP: 49KB

Simulation Model

SIMetrix Model[Apr,2026]ZIP: 10KB

Catalog

Selection Guide MOSFETs 2026 Rev1.0[Feb,2026]PDF: 4223KB

产品概要

Application Scope High-Efficiency DC-DC Converters / Switching Voltage Regulators / Motor Drivers
Polarity N-ch
Generation U-MOSⅨ-H
Internal Connection Single
RoHS Compatible Product(s) (#) Available

封装

Toshiba Package Name SOP Advance(N)
Package Image 东芝 TPH1R906PU Power MOSFET (N-ch single 30V&lt;VDSS&le;60V)产品 SOP Advance(N) 封装图片
Pins 8
Mounting Surface Mount
Width×Length×Height
(mm)		 4.9×6.1×1.0
Package Dimensions 查看
Land pattern dimensions 查看
SamacSys CAD model
(Symbol, Footprint and 3D model)		 Download from SamacSys<br>*1 *2

Download from SamacSys
*1 *2

 Please refer to the link destination to check the detailed size.

*1

SamacSys is a wholly owned subsidiary of Supplyframe, Inc. CAD models (Symbol/Footprint /3D model) are provided by Supplyframe, Inc. The footprints are generated based on the specifications of SamacSys.

*2

Please note that the footprint dimensions may differ from the reference Land Pattern dimensions provided on our website.

绝对最大额定值

项目 符号 值 单位
Drain-Source voltage VDSS 60 V
Gate-Source voltage VGSS +/-20 V
Drain current ID 207 A
Power Dissipation PD 170 W

电气特性

项目 符号 条件 值 单位
Gate threshold voltage (Max) Vth - 2.5 V
Gate threshold voltage (Min) Vth - 1.5 V
Drain-Source on-resistance (Max) RDS(ON) |VGS|=4.5V 5.4 mΩ
Drain-Source on-resistance (Max) RDS(ON) |VGS|=10V 1.91 mΩ
Input capacitance (Typ.) Ciss - 3770 pF
Total gate charge (Typ.) Qg VGS=10V 57 nC
Output charge (Typ.) Qoss - 50 nC
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Apr,2026

Apr,2026

Apr,2026

*1

LTspice ® is a trademark and simulation software of ADI (Analog Devices, Inc.).

*2

SIMetrix® is simulation software and registered trademarks of SIMetrix Technologies Ltd.

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