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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.
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单片方波驱动产品采用新高击穿电压SOI(绝缘硅)工艺。功率IC配备了600伏IGBT、续流二极管(FWD)和控制电路。功率IC安装在与低热阻外露焊盘(E-Pad)兼容的封装(HSSOP31)上。采用少量外围部件即可以驱动小型高效无刷电机。在东芝最新的产品中,开关损耗降低,从而比传统产品的效率提高约0.3W。
新产品采用新高击穿电压SOI工艺,与传统产品相比,降低了开关损耗,提高效率约0.3W(@输入功率=40W)。
除了传统的限流功能外,我们还增加了过电流保护功能,以提高系统故障的安全性,例如当电机锁定时。霍尔元件可以作为检测转子位置的传感器,有助于降低系统成本。
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