采用新高击穿电压SOI工艺降低损耗
单片方波驱动产品采用新高击穿电压SOI（绝缘硅）工艺。功率IC配备了600伏IGBT、续流二极管（FWD）和控制电路。功率IC安装在与低热阻外露焊盘（E-Pad）兼容的封装（HSSOP31）上。采用少量外围部件即可以驱动小型高效无刷电机。在东芝最新的产品中，开关损耗降低，从而比传统产品的效率提高约0.3W。
新产品采用新高击穿电压SOI工艺，与传统产品相比，降低了开关损耗，提高效率约0.3W（@输入功率=40W）。
除了传统的限流功能外，我们还增加了过电流保护功能，以提高系统故障的安全性，例如当电机锁定时。霍尔元件可以作为检测转子位置的传感器，有助于降低系统成本。
单片3相直流无刷电机驱动IC
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