采用新高击穿电压SOI工艺降低损耗

通过最新的高击穿电压SOI工艺降低损耗

单片方波驱动产品采用新高击穿电压SOI(绝缘硅)工艺。功率IC配备了600伏IGBT、续流二极管(FWD)和控制电路。功率IC安装在与低热阻外露焊盘(E-Pad)兼容的封装(HSSOP31)上。采用少量外围部件即可以驱动小型高效无刷电机。在东芝最新的产品中,开关损耗降低,从而比传统产品的效率提高约0.3W。

新产品采用新高击穿电压SOI工艺,与传统产品相比,降低了开关损耗,提高效率约0.3W(@输入功率=40W)。

除了传统的限流功能外,我们还增加了过电流保护功能,以提高系统故障的安全性,例如当电机锁定时。霍尔元件可以作为检测转子位置的传感器,有助于降低系统成本。

单片3相直流无刷电机驱动IC

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