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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.

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通过内置MOSFET的多芯片模块提高效率和电流

与之前的设备相比,损失减少了约36%

多芯片模块产品使用带有内置体二极管的MOSFET,具有快速反向恢复时间(trr),适用于电机。与正弦波驱动的传统产品相比,最新产品将损耗降低约38%,获得了高效率。我们的产品采用20×14.2×2.2mm的小型贴片封装(SSOP30),额定电流为5A。此外,每相的源端被单独分开。将它们与我们的微控制器(MCU)和电机驱动IC(MCD)相结合,我们可以通过三分流器法来处理无传感器控制,比如矢量控制。

最新产品的导通电阻很低,且配备了一个具有600伏击穿电压的超结MOSFET(SJMOS)和一个内置体二极管(HSD:高速二极管),具有快速反向恢复时间(trr),现已经上市多年。结果,正弦波驱动与传统产品相比约为1.8W(@输入功率=40W),效率高,减少损耗约38%。

多芯片模块3相直流无刷电机驱动IC

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