通过内置MOSFET的多芯片模块提高效率和电流

与之前的设备相比,损失减少了约36%

多芯片模块产品使用带有内置体二极管的MOSFET,具有快速反向恢复时间(trr),适用于电机。与正弦波驱动的传统产品相比,最新产品将损耗降低约38%,获得了高效率。我们的产品采用20×14.2×2.2mm的小型贴片封装(SSOP30),额定电流为5A。此外,每相的源端被单独分开。将它们与我们的微控制器(MCU)和电机驱动IC(MCD)相结合,我们可以通过三分流器法来处理无传感器控制,比如矢量控制。

最新产品的导通电阻很低,且配备了一个具有600伏击穿电压的超结MOSFET(SJMOS)和一个内置体二极管(HSD:高速二极管),具有快速反向恢复时间(trr),现已经上市多年。结果,正弦波驱动与传统产品相比约为1.8W(@输入功率=40W),效率高,减少损耗约38%。

多芯片模块3相直流无刷电机驱动IC

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