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About information presented in this cross reference

The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.

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IGBT有哪些结构?

IGBT的常见结构包括:(a)穿通型(PT);(b)非穿通型(NPT);及(c)薄晶圆穿通型,亦称为场截止型(FS)。

(d)反向导通IGBT(RC-IGBT)是IGBT家族的最新成员;其中,FS IGBT的集电极P区的一部分被N区所取代,并且续流二极管像MOSFET一样集成。下表显示了各代IGBT及其结构。

  • PT IGBT
    自从IGBT问世以来,一直使用PT结构。集电极侧的P层很厚,低电流区的正向电压很高。
  • NPT IGBT
    PT IGBT之后出现了NPT IGBT。NPN IGBT具有很强的耐久性,可用于硬开关和其它逆变器应用
  • 薄型PT IGBT
    薄型PT是最新的IGBT结构之一,使用薄晶圆技术来改善正向电压降和开关速度之间的平衡性。凭借由于低损耗,薄型PT IGBT被广泛使用。
  • RC-IGBT
    RC-IGBT使用最新的薄晶圆技术,并集成了一个快速恢复二极管(FRD)。RC-IGBT可用于电压谐振和其它应用。
(a)PT IGBT
(a)PT IGBT
(b)NPT IGBT(NPT:非穿通型)
(b)NPT IGBT(NPT:非穿通型)
(c)薄型PT IGBT(FS-IGBT)
(c)薄型PT IGBT(FS-IGBT)
(d)RC-IGBT
(d)RC-IGBT
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