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热阻被计算为由相对于功耗的单个脉冲施加所引起的温度变化率。瞬态热阻是器件对单个脉冲的响应,用脉冲持续时间表示。根据瞬态热阻计算SOA的热限制区。
当电流通过半导体的结时,在结上消耗的功率会导致结的温度会升高。如果有大电流流过,会因温度过高而造成劣化和击穿。因此,产品数据表的绝对最大额定值中规定了结温。(表1)
对pn结施加直流电会产生热量。这些热量通过散热片、封装表面和引脚向基板和空气辐射。从而导致结温在施加电流后立即开始上升,但最终会在某一特定温度饱和。
将温度变化除以施加的功率得到的值是热阻,它表示热传递的难易程度。当达到饱和状态时,这个值称为饱和热阻(热阻),而在有变化时的瞬态值则称为瞬态热阻(瞬态热阻抗)。图1是施加瞬时脉冲功率时的瞬态热阻图表。通过该图表,可以得到施加瞬时脉冲时的结温。它也可以用来估算由于施加连续脉冲功率而引起的结温升高。
详见双极晶体管应用说明:Thermal Stability and Thermal Design.
结温与SOA之间的关系如下所示:
Tj(max)=rth(j-c)×Po+Ta
从图1可以看出,当脉冲宽度为10ms时,瞬态热阻读数为:
rth(j-c)=9 ℃/W
最大结温(Tj(max))的峰值功率计算如下:
150 ℃=9 ℃/W*Po+25 ℃
Po=125/9=14 W
例如,当VCE=80 V时,VCE=20 V时的允许电流计算如下:
14/20=0.7 A
因此,在图2所示的SOA图中,由瞬态热阻限定的区域是由蓝色虚线界定的区域。必须在该虚线所限定的区域内使用双极晶体管,以保证其结温不超过规定的Tj(max)。
由瞬态热阻限定的安全工作区(SOA)表示为热击穿限制。
以下文件还包含相关信息: