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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.
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分立半导体器件对工作温度无任何限制。
这是因为,不同于IC的情况,元件中产生的热量会随着用户的使用条件而发生变化。根据施加在器件上的电压和电流等计算器件的结温。对于MOSFET的分立半导体器件,规定了该结温的最大值。
尽管可在最高结温Tch(最大值)或更低的温度下使用,但必须考虑性能下降和寿命等可靠性问题。性能下降等降级会随着结温的升高而加速。
为保持您的设备上的长期稳定性能,请在设计降额最大结温Tch(最大值)。
关于降额信息,详见以下文件。
文件标题:“Concepts of Derating”