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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
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在功率MOSFET的漏极与源极之间施加反向电压时有哪些注意事项？
对于定义漏极反向电流IDR或峰值反向电流IDRP的设备，请勿超过绝对最大额定值。
功率MOSFET在源极与漏极之间具有相当于一个二极管的电路结构。
当在功率MOSFET的漏极与源极之间施加反向电压时，电流将在该体二极管中流动，如下图所示。
指定了反向漏极电流IDR（直流）和反向漏极电流（脉冲）IDRP的MOSFET（硅型）不得发送超过绝对最大额定值的IDR和IDRP的电流。
有必要考虑流过体二极管的电流所导致的升温。
上升的温度不超过绝对最大额定值的结温Tch。
请考虑温度降额，并确认实际设备无任何问题。
对于未指定反向漏极电流IDR（直流）和反向漏极电流（脉冲）IDRP的MOSFET（硅型），请联系您当地的东芝销售代表。
另请参与以下页面。