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可以在漏极和源极之间主动使用体二极管。它实际用于电机驱动电路、电源电路等。
下图显示了在MOSFET横截面中形成体二极管的位置,以及考虑寄生元件的等效电路。
对于这些应用中使用的MOSFET,我们在数据表中说明了体二极管的规格。
项目 | 符号 | 单位 | 说明 |
---|---|---|---|
反向漏极电流(直流) 反向漏极电流(脉冲) |
IDR IDRP |
A | MOSFET的体二极管允许的最大正向电流 |
正向电压(二极管) | VDSF | V | 正向电流施加到体二极管时的漏极-源极电压 |
反向恢复时间 | trr | ns | 在规定的测试条件下,体二极管执行反向恢复操作时,反向恢复电流达到零所需的时间(trr)和电荷量(Qrr)。此时的峰值电流为Irr。 |
反向恢复电荷量 | Qrr | μC | |
反向恢复峰值电流 | Irr | A | |
二极管dv/dt耐力 | dv/dt | V/ns | 二极管反向恢复期间对漏极-源极电压波动的抵抗力 |
项目 | 符号 | 测试条件 | 最小值 | 典型值 | 最大值 | 单位 |
---|---|---|---|---|---|---|
二极管正向电压 | VDSF | IDR=30.8A,VGS=0V | - | - | -1.7 | V |
反向恢复时间 | trr | IDR=15.4A,VGS=0V -dIDR/dt=100A/μs |
- | 135 | 220 | ns |
二极管反向恢复电荷 | Qrr | - | 0.6 | - | μC | |
二极管反向恢复峰值电流 | Irr | - | 10 | - | A | |
二极管dv/dt能力 | dv/dt | IDR=15.4A,VGS=0V,VDD=400V | 50 | - | - | V/ns |
关于体二极管,在应用说明“Electrical properties: Power MOSFET application note”中也进行了说明。请参考。