This webpage doesn't work with Internet Explorer. Please use the latest version of Google Chrome, Microsoft Edge, Mozilla Firefox or Safari.
请输入3个以上字符
The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.
请输入3个以上字符
是指当MOSFET在指定的栅极电压下导通时漏极与源极之间的电阻。
导通电阻RDS(ON)的计算方法如下:将指定的漏极电流ID除以漏极电流ID,将VGS增加至指定电压,测量漏极-源极电压,然后计算导通电阻。
注)确保恒流电源的开路电压等于或小于漏极与地之间的耐压。
相关信息也请参考以下页面。