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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.
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当eFuse IC（电子保险丝／熔断器）的输入或输出端子上施加尖峰电压时，如何采取措施？
可以使用齐纳二极管或肖特基势垒二极管 (SBD) 来采取应对措施。
如果eFuse IC的输入端瞬态电压超过绝对最大额定值，请在输入端和GND之间连接一个齐纳二极管。
对于输出侧产生的负尖峰电压，可以连接SBD（肖特基势垒二极管）以防止输出电位降至GND以下。
为降低与eFuse IC连接的图案的电感，输入和输出侧的长度应尽可能短、GND区域尽可能宽，从而降低阻抗。
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