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当ESD能量进入电路时,ESD保护二极管导通,将大部分电流分流至接地(GND)。ESD事件过程中,二极管两端电压定义为钳位电压VC。ESD保护二极管导通时,可视为与被保护器件(DUP)并联。需要注意的是,ESD保护二极管导通需要一点时间。
因此,ESD能量会加到DUP,直到ESD保护二极管导通。即使ESD保护二极管导通后,低于反向击穿电压的电压也会加到DUP。流向ESD保护二极管和DUP的电流与各自的阻抗成反比。“导通”状态下,ESD保护二极管的阻抗定义为动态电阻。
ESD保护器件有多种类型。ESD保护二极管具有以下特点:
图5对比了三个具有不同钳位电压(VC)规格的ESD保护二极管的性能,显示结果为ESD进入后DUP输入端测得的电压。图5仅作为指导,因为这些波形是ESD用于连接器的结果,而不是连接到天线末端。尽管DF2B5M5SL和DF2B5M4SL钳位电压(VC)相似,但它们的第一个峰值电压大约相差50%。
图5钳位电压对ESD保护性能的影响
(不同钳位电压规格的ESD保护二极管)
以下是防止DUP性能下降或损坏的注意事项:
上面第二个要求与第1节中描述的第三个要求(反向工作峰值电压(VRWM)高于最大信号振幅)相矛盾。为了提高系统整体ESD耐受性,检查RF IC的ESD耐受性,选择能够吸收超过ESD耐受性ESD能量的ESD保护二极管。