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SBD采用的是半导体与金属(比如钼)之间的结,而不是PN结。由于具有小的正向电压和短的反向恢复时间,它们适用于高速开关应用。
肖特基势垒二极管(SBD)作为一种二极管,在半导体(通常是n型半导体)与金属(例如铂(Pt)、钼(Mo)或钛(Ti))之间形成一个结,但非一个pn结。
SBD专门利用金属的功函数(即从金属表面去除电子所需的能量)与半导体的电子亲和力之间的差异所产生的肖特基势垒。(如为n型半导体,仅当金属的功函数高于n型半导体时,才会产生肖特基势垒。)
SBD的正向电压低于pn结二极管,因为SBD使用势垒低于pn结的金属半导体结。
pn结二极管是一种双极器件,其中电子和空穴均作为供体,而通常由n型半导体和金属组成的SBD是一种单极器件,其中仅电子作为供体。因此,SBD没有因残留少数载流子而产生的反向恢复电荷,使用pn结二极管时需注意此问题。然而,由于端子间存在的静电电容,因此存在反向恢复时间,尽管与pn结二极管相比它较小。
SBD的正向电压低并且反向恢复时间短,因此SBD适用于高速开关应用。
硅SBD只能承受几十伏电压,而一些使用宽禁带(WBG)半导体的SiC SBD的耐压超过600V。
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