二极管是一种具有一个PN结或一个金属-半导体结的半导体器件。它有两个端子,称为阳极和阴极。
Diodes are broadly divided into PN junction diodes and metal-semiconductor junction diodes (Schottky barrier diodes) based on their type of junction. pn junction diodes are further divided into rectifier diodes and Zener diodes. (Fig. 1)
The following FAQ explains the types of diodes.
它具有开关的特性,因此可根据施加在阳极与阴极之间的电压的方向,使电流流动或不流动。这种动作称为整流。
半导体的电导率值介于导电性良好的导体(如金属)和不易导电的绝缘体(如玻璃或橡胶)的电导率之间。例如,硅和锗都是半导体材料。
(有关半导体的更多信息,请参阅e-learning“分立半导体器件基础知识”)
作为二极管材料,使用p型和n型半导体。掺杂有硼(B)或其它电子受体原子的半导体称为p型半导体,因为其中的大部分电荷载流子为正空穴。掺杂有砷或其它电子供体原子的半导体称为n型半导体,因为其中的大部分电荷载流子为负电子。pn结二极管由p型和n型半导体组合而成。例如,通过将以高能量加速的p型(n型)掺杂剂离子注入n型(p型)半导体,生成pn结。
以这种方式形成并附带电极端头的pn结称为二极管。以这种方式形成并附带电极端子的pn结称为二极管。(图1)
二极管仅在正向偏置时才会传导电流(即当阳极比阴极更加正向偏置时)(图2)。这种只允许电流沿一个方向流动的功能称为整流。
通常二极管在反向偏置时不导通。然而,随着反向偏置电压的增大,大电流会在特定电压下突然通过二极管。此电压称为击穿电压(VBR)。在击穿区域高于VBR时,电压的细微变化会引起电流的大幅变化。换言之,相对于电流变化,电压变化很小。一些二极管专门利用这种恒压特性,例如齐纳二极管和瞬态电压抑制(TVS)二极管(亦称为ESD保护二极管)。
图3显示了pn结二极管的IF-VF曲线。
此外,还有一种二极管使用金属代替p型或n型半导体。由于金属与p型(n型)半导体之间的功函数差异,金属半导体结可以是具有类似于pn结的整流特性的肖特基结,具体取决于金属半导体组合。这种二极管称为肖特基势垒二极管(SBD),其特点是正向电压低。
Diodes are the simplest semiconductor elements and have been used in a wide range of circuits. Some applications have been replaced by ICs, but here are some examples of where diodes are still used today.
Clipper circuits, limiter circuits:
There are forward clippers and reverse clippers in clipper circuits. One application of this is the limiter circuit. This is still used today for input protection (overvoltage protection) of ICs.
Diode packages
Diode packages are mainly two-pin packages with two terminals, an anode and a cathode. We offer mainly surface mount packages ranging from ultra-small to large. There are also multi-pin packages with multiple built-in diodes.
Some examples are shown below.
For details on package dimensions, etc., please refer to the following page.
Diode Package
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