* : Products list (parametric search)
* : Products list (parametric search)
* : Products list (parametric search)
* : Products list (parametric search)
* : Products list (parametric search)
* : Products list (parametric search)
* : Products list (parametric search)
* : Products list (parametric search)
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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.
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P型和N型半导体的接触面为PN结。
当P型和N型半导体接触时,空穴和自由电子的载流子相互吸引,在P型和N型半导体的结合处重新组合并消失。由于在结附近没有载流子,所以它被称为耗尽层,它与绝缘体的状态相同。当连接P型至"+”电极,并连接N型至"-”电极以施加电压时,电子从N型区域流至P型区域,尚未通过空穴再结合而消失的电子将移动至“+”电极,这就形成了电流的流动。这一机理也适用于P型区域空穴。