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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.
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化合物半导体(例如GaAs、InP和IngGaAlP)长期以来都被用作高频器件或光电器件的材料。InGaN是蓝色LED激光器的材料,SiC和GaN是功率半导体的材料,这些材料近来引起了人们的广泛关注。