- 型号搜索
- 交叉搜索
- 关键词搜索
- 参数搜索
- 库存查询与购买
This webpage doesn't work with Internet Explorer. Please use the latest version of Google Chrome, Microsoft Edge, Mozilla Firefox or Safari.
请输入3个以上字符
The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.
请输入3个以上字符
CMOS逻辑IC基本配置
CMOS逻辑IC的横截面示例
- 在n基底上形成宽的扩散区（p阱）。
- 在p阱上形成n沟道MOSFET。
- 在n基底上形成p沟道MOSFET。
- 具体取决于工艺，在p基底上形成n阱。
- 由于MOSFET的性能和集成密度由栅极宽度决定，所以制造工艺将用栅极宽度来表示。例如，栅极宽度为1.0μm的CMOS工艺称为1.0μm CMOS工艺。
（在本例中，栅极宽度是指#3和#4之间以及#5和#6之间的距离。）
#1.N基底：通常是晶圆基底
#2.P阱：形成n沟道MOSEFT的区域
#3.n沟道MOSFET源极的扩散区
#4.n沟道MOSFET漏极的扩散区
#5.p沟道MOSFET漏极的扩散区
#6.p沟道MOSFET源极的扩散区
#7.p阱偏压扩散区
#8.n基底偏压扩散区
- 上一篇
- 4/4
