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典型三端稳压器(也称标准稳压器)的输出晶体管使用NPN型晶体管或N沟道MOSFET。
这类稳压器工作需要输入输出电压差,称为压差(VDO),如下图所示。NPN型稳压器,VDO最小值必须满足VIN-VOUT>RIN×IIN+2×VBE。
采用MOSFET的稳压器,VDO 的最小值必须满足VIN-VOUT> RIN×IIN+VGS。假设RIN=1kΩ, IIN=1mA,VBE=0.7V,VGS=1V。那么,经计算生成5V输出电压所需最小输入电压,NPN型稳压器为7.4V,基于MOSFET的稳压器为7V。
与这些稳压器不同,LDO稳压器主要使用PNP晶体管或P沟道MOSFET作为输出晶体管。这种LDO稳压器的最小压差由集电极-发射极电压(VCE(sat))和漏源电压(VDS=RDS(ON)×ID)决定。因此,LDO稳压器的工作压差小于三端稳压器。
还有一种新型LDO稳压器压差更小。它使用导通电阻小于P沟道MOSFET的N沟道MOSFET作为输出晶体管,配有专门用于控制电路(包括MOSFET驱动电路)的电源引脚。