Power MOSFET (N-ch single 60V<VDSS≤150V)
Application Scope | DC-DC Converters / Automotive / Switching Voltage Regulators / Motor Drivers |
---|---|
Polarity | N-ch |
Generation | U-MOSⅧ-H |
Internal Connection | Single |
PPAP | Capable(*) |
AEC-Q101 | Qualified(*) |
RoHS Compatible Product(s) (#) | Available |
*: For detail information, please contact to our sales.
Toshiba Package Name | DPAK+ |
---|---|
Package Image | |
Pins | 3 |
Mounting | Surface Mount |
Width×Length×Height (mm) |
6.5×9.5×2.3 |
Package Dimensions | 查看 |
Land pattern dimensions | 查看 |
CAD data (Symbol, Footprint and 3D model) |
Download from UltraLibrarian® in your desired CAD format (Note) |
Please refer to the link destination to check the detailed size.
(Note) Ultra Librarian® is a Registered trademark and CAD data library of EMA (EMA Design Automation, Inc.).
项目 | 符号 | 值 | 单位 |
---|---|---|---|
Drain-Source voltage | VDSS | 100 | V |
Gate-Source voltage | VGSS | +/-20 | V |
Drain current | ID | 60 | A |
Power Dissipation | PD | 180 | W |
项目 | 符号 | 条件 | 值 | 单位 |
---|---|---|---|---|
Gate threshold voltage (Max) | Vth | - | 3.5 | V |
Gate threshold voltage (Min) | Vth | - | 2.5 | V |
Drain-Source on-resistance (Max) | RDS(ON) | |VGS|=6V | 9.25 | mΩ |
Drain-Source on-resistance (Max) | RDS(ON) | |VGS|=10V | 6.11 | mΩ |
Input capacitance (Typ.) | Ciss | - | 4320 | pF |
Total gate charge (Typ.) | Qg | VGS=10V | 60 | nC |
Reverse recovery time (Typ.) | trr | - | 82 | ns |
Reverse recovery charge (Typ.) | Qrr | - | 107 | nC |
Orderable part number (example) |
MOQ(pcs) | Reliability Information |
RoHS | AEC-Q100 AEC-Q101 |
---|---|---|---|---|
TK60S10N1L,LQ | 2000 | - | Yes | Yes |