TJ200F04M3L

不推荐用于新设计

Power MOSFET (P-ch single)

数据表

TJ200F04M3L 数据表/日文[Dec,2024]PDF: 486KB

数据表

TJ200F04M3L 数据表/英文[Dec,2024]PDF: 349KB

Simulation Model

PSpice Model[Aug,2015]lib: 3KB

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Parasitic Oscillation and Ringing: Power MOSFET Application Notes[Jul,2018]PDF: 1394KB

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Calculating the Temperature of Discrete Semiconductor Devices[Jul,2018]PDF: 965KB

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Catalog

Selection Guide MOSFETs 2025 Rev1.1[Sep,2025]PDF: 3987KB

数据表

TJ200F04M3L 数据表/日文[Dec,2024]PDF: 486KB

数据表

TJ200F04M3L 数据表/英文[Dec,2024]PDF: 349KB

相关技术数据

MOSFET SPICE model grade[May,2023]PDF: 1639KB

相关技术数据

Electrical Characteristics: Power MOSFET Application Notes[Feb,2023]PDF: 1266KB

相关技术数据

Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2[Dec,2020]PDF: 3593KB

相关技术数据

Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system[Sep,2020]PDF: 1517KB

相关技术数据

Avalanche energy calculation[Mar,2020]PDF: 562KB

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Resonant Circuits and Soft Switching[Nov,2019]PDF: 1071KB

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U-MOSⅨ-H 60V Low VDS spike TPH1R306P1[Aug,2019]PDF: 1081KB

相关技术数据

Hints and Tips for Thermal Design part3[Feb,2019]PDF: 3165KB

相关技术数据

Reverse Recovery Operation and Destruction of MOSFET Body Diode[Sep,2018]PDF: 472KB

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MOSFET Secondary Breakdown[Sep,2018]PDF: 450KB

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RC Snubbers for Step-Down Converters[Sep,2018]PDF: 1846KB

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Structures and Characteristics: Power MOSFET Application Notes[Jul,2018]PDF: 331KB

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Maximum Ratings: Power MOSFET Application Notes[Jul,2018]PDF: 705KB

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Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes[Jul,2018]PDF: 848KB

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Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes[Jul,2018]PDF: 789KB

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Parasitic Oscillation and Ringing: Power MOSFET Application Notes[Jul,2018]PDF: 1394KB

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Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes[Jul,2018]PDF: 1178KB

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MOSFET Gate Drive Circuit: Power MOSFET Application Notes[Jul,2018]PDF: 1215KB

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Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes[Jul,2018]PDF: 1077KB

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MOSFET Avalanche Ruggedness: Power MOSFET Application Notes[Jul,2018]PDF: 616KB

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Hints and Tips for Thermal Design for Discrete Semiconductor Devices[Jul,2018]PDF: 1266KB

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Calculating the Temperature of Discrete Semiconductor Devices[Jul,2018]PDF: 965KB

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Derating of the MOSFET Safe Operating Area[Jul,2018]PDF: 656KB

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MOSFET Self-Turn-On Phenomenon[Jul,2018]PDF: 1338KB

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Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2[Jul,2018]PDF: 1069KB

相关技术数据

Motor Control (Vacuum Cleaners)[Jul,2018]PDF: 2483KB

Simulation Model

PSpice Model[Aug,2015]lib: 3KB

Catalog

Selection Guide MOSFETs 2025 Rev1.1[Sep,2025]PDF: 3987KB

产品概要

Application Scope DC-DC Converters / Automotive / Motor Drivers
Polarity P-ch
Generation U-MOSⅥ
Internal Connection Single
AEC-Q101 Qualified(*)
RoHS Compatible Product(s) (#) Available

*: For detail information, please contact to our sales.

封装

Toshiba Package Name TO-220SM(W)
Package Image 东芝 TJ200F04M3L Power MOSFET (P-ch single)产品 TO-220SM(W) 封装图片
Pins 3
Mounting Surface Mount
Width×Length×Height
(mm)		 10.0×13.0×3.5
Package Dimensions 查看
Land pattern dimensions 查看
Ultra Librarian® CAD model
(Symbol, Footprint and 3D model)		 Download from UltraLibrarian<sup>®</sup> in your desired CAD format<br>(Note1)(Note2)

Download from UltraLibrarian® in your desired CAD format
(Note1)(Note2)

 Please refer to the link destination to check the detailed size.

(Note1)

Ultra Librarian® is a Registered trademark and CAD model library of EMA (EMA Design Automation, Inc.). CAD models (Symbol/Footprint /3D model) are provided by UltraLibrarian®. The footprints are generated based on the specifications of Ultra Librarian®.

(Note2)

Please note that the footprint dimensions may differ from the reference Land Pattern dimensions provided on our website.

绝对最大额定值

项目 符号 值 单位
Drain-Source voltage VDSS -40 V
Gate-Source voltage VGSS +10/-20 V
Drain current ID -200 A
Power Dissipation PD 375 W

电气特性

项目 符号 条件 值 单位
Gate threshold voltage (Max) Vth - -3.0 V
Gate threshold voltage (Min) Vth - -2.0 V
Drain-Source on-resistance (Max) RDS(ON) |VGS|=10V 1.8 mΩ
Drain-Source on-resistance (Max) RDS(ON) |VGS|=6V 2.6 mΩ
Input capacitance (Typ.) Ciss - 12800 pF
Total gate charge (Typ.) Qg VGS=-10V 460 nC
Reverse recovery time (Typ.) trr - 90 ns
Reverse recovery charge (Typ.) Qrr - 104 nC

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Aug,2015

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车载V2X
在设计V2X时，降低电源和信号噪声以及降低功耗等非常重要。东芝提供了适用于RF模块单元、电源单元等的各种半导体产品的信息以及电路配置示例。
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