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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.
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该参考设计提供了使用半无桥/隔离相移全桥的1.6kW 80+白金级电源的设计指南,数据和其他内容。
| 输入电压 | AC 90V至264V |
|---|---|
| 输出电压 | DC 12V |
| 输出功率 | 0.8kW(AC 100V系统输入), 1.6kW(AC 200V系统输入) |
| 电路拓扑 | 无桥PFC、相移全桥+同步整流、输出的Oring电路 |
Materials for designers, such as an overview of circuit operation and explanations of design considerations. Please click on each tab to view the contents.
Provides circuit data that can be loaded into EDA tools, PCB layout data, and data used in PCB manufacturing. Available in formats from multiple tool vendors. You can freely edit it with your preferred tool.
| 器件型号 | 器件目录 | 搭载部位・数量 | 说明 |
|---|---|---|---|
| 功率MOSFET(N沟道500V<VDSS≤700V) | PFC・4 | N沟道MOSFET,600V,0.125Ω@10V,TO-247,DTMOSⅣ-H | |
| SiC肖特基二极管 | PFC・2 | 650V/8A SiC肖特基势垒二极管,TO-220-2L | |
| 功率MOSFET(N沟道500V<VDSS≤700V) | 原边・4 | N沟道MOSFET,600V,0.14Ω@10V,TO-247,DTMOSⅣ-H | |
| 功率MOSFET(单N沟道60V<VDSS≤150V) | 副边・8 | N沟道MOSFET,100V,0.0037Ω@10V,SOP Advance,U-MOSⅨ-H | |
| 功率MOSFET(单N沟道VDSS≤30V) | Oring・10 | N沟道MOSFET,30V,0.0009Ω@10V,SOP Advance,U-MOSⅧ | |
| 光耦 | 原边和副边之间的通信・4 | 光耦(光电IC输出),高速,50Mbps,5000Vrms,SO6L |
We provide materials useful for designing and considering similar circuits, such as application notes for installed products. Please click on each tab to view the contents.