TPCP8205-H

不推荐用于新设计

Power MOSFET (N-ch dual)

数据表

TPCP8205-H 数据表/日文[Oct,2015]PDF: 385KB

数据表

TPCP8205-H 数据表/英文[Oct,2015]PDF: 261KB

Simulation Model

PSpice Model[Nov,2015]lib: 3KB

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Catalog

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数据表

TPCP8205-H 数据表/日文[Oct,2015]PDF: 385KB

数据表

TPCP8205-H 数据表/英文[Oct,2015]PDF: 261KB

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Reverse Recovery Operation and Destruction of MOSFET Body Diode[Sep,2018]PDF: 472KB

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Parasitic Oscillation and Ringing: Power MOSFET Application Notes[Jul,2018]PDF: 1394KB

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Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes[Jul,2018]PDF: 1178KB

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Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2[Jul,2018]PDF: 1069KB

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Simulation Model

PSpice Model[Nov,2015]lib: 3KB

Catalog

Introduction of Toshiba MOSFET Gate Driver ICs[Jun,2025]PDF: 455KB

Catalog

Selection Guide MOSFETs 2025 Rev1.0[Feb,2025]PDF: 3497KB

产品概要

Application Scope Motor Drivers / Mobile Equipments
Polarity N-ch×2
Generation U-MOSⅥ-H
Internal Connection Independent
RoHS Compatible Product(s) (#) Please contact us.

封装

Toshiba Package Name PS-8
Package Image 东芝 TPCP8205-H Power MOSFET (N-ch dual)产品 PS-8 封装图片
Pins 8
Mounting Surface Mount
Width×Length×Height
(mm)		 2.9×2.8×0.8
Package Dimensions 查看
Land pattern dimensions 查看

 Please refer to the link destination to check the detailed size.

绝对最大额定值

项目 符号 值 单位
Drain-Source voltage (Q1/Q2) VDSS 30 V
Gate-Source voltage (Q1/Q2) VGSS +/-20 V
Drain current (Q1/Q2) ID 6.5 A
Power Dissipation PD 1.48 W

电气特性

项目 符号 条件 值 单位
Gate threshold voltage (Q1/Q2) (Max) Vth - 2.3 V
Drain-Source on-resistance (Q1/Q2) (Max) RDS(ON) |VGS|=4.5V 29 mΩ
Drain-Source on-resistance (Q1/Q2) (Max) RDS(ON) |VGS|=10V 26 mΩ
Input capacitance (Q1/Q2) (Typ.) Ciss - 830 pF
Total gate charge (Q1/Q2) (Typ.) Qg VGS=10V 13.8 nC

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Nov,2015

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