TPC6105

停产产品

Power MOSFET (P-ch single)

数据表

TPC6105 数据表/日文[Sep,2009]PDF: 310KB

数据表

TPC6105 数据表/英文[Sep,2009]PDF: 223KB

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数据表

TPC6105 数据表/日文[Sep,2009]PDF: 310KB

数据表

TPC6105 数据表/英文[Sep,2009]PDF: 223KB

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MOSFET Secondary Breakdown[Sep,2018]PDF: 450KB

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Parasitic Oscillation and Ringing: Power MOSFET Application Notes[Jul,2018]PDF: 1394KB

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Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes[Jul,2018]PDF: 1178KB

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Catalog

Selection Guide MOSFETs 2025 Rev1.1[Sep,2025]PDF: 3987KB

产品概要

Application Scope Notebook PCs / Power Management Switches / Load Switches
Polarity P-ch
Generation U-MOSⅢ
Internal Connection Single
RoHS Compatible Product(s) (#) Please contact us.

封装

Toshiba Package Name VS-6
Pins 6
Mounting Surface Mount
Width×Length×Height
(mm)		 2.9×2.8×0.7
Package Dimensions 查看
Land pattern dimensions 查看

绝对最大额定值

项目 符号 值 单位
Drain-Source voltage VDSS -20 V
Gate-Source voltage VGSS +/-8 V
Drain current ID -2.7 A
Power Dissipation PD 2.2 W

电气特性

项目 符号 条件 值 单位
Gate threshold voltage (Max) Vth - -1.2 V
Gate threshold voltage (Min) Vth - -0.5 V
Drain-Source on-resistance (Max) RDS(ON) |VGS|=4.5V 110 mΩ
Drain-Source on-resistance (Max) RDS(ON) |VGS|=2.5V 160 mΩ
Drain-Source on-resistance (Max) RDS(ON) |VGS|=1.8V 300 mΩ
Input capacitance (Typ.) Ciss - 470 pF

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