Small-signal MOSFET 2 in 1
Application Scope | Power Management Switches / High-Speed Switching |
---|---|
Polarity | P-ch×2 |
Generation | U-MOSⅢ |
Internal Connection | Independent |
Component Product (Q1) | SSM6P39TU |
Component Product (Q2) | SSM6P39TU |
AEC-Q101 | Qualified(*) |
RoHS Compatible Product(s) (#) | Available |
*: For detail information, please contact to our sales.
Toshiba Package Name | SOT-363F (UF6) |
---|---|
Package Image | |
Package Code | SOT-363F |
Pins | 6 |
Mounting | Surface Mount |
Width×Length×Height (mm) |
2.0×2.1×0.7 |
Package Dimensions | 查看 |
Land pattern dimensions | 查看 |
CAD data (Symbol, Footprint and 3D model) |
Download from UltraLibrarian® in your desired CAD format (Note) |
Please refer to the link destination to check the detailed size.
(Note) Ultra Librarian® is a Registered trademark and CAD data library of EMA (EMA Design Automation, Inc.).
项目 | 符号 | 值 | 单位 |
---|---|---|---|
Drain-Source voltage (Q1/Q2) | VDSS | -20 | V |
Gate-Source voltage (Q1/Q2) | VGSS | +/-8 | V |
Drain current (Q1/Q2) | ID | -1.5 | A |
Power Dissipation | PD | 0.5 | W |
项目 | 符号 | 条件 | 值 | 单位 |
---|---|---|---|---|
Gate threshold voltage (Q1/Q2) (Max) | Vth | - | -1.0 | V |
Drain-Source on-resistance (Q1/Q2) (Max) | RDS(ON) | |VGS|=4V | 213 | mΩ |
Drain-Source on-resistance (Q1/Q2) (Max) | RDS(ON) | |VGS|=2.5V | 294 | mΩ |
Drain-Source on-resistance (Q1/Q2) (Max) | RDS(ON) | |VGS|=1.8V | 430 | mΩ |
Input capacitance (Q1/Q2) (Typ.) | Ciss | - | 250 | pF |
Total gate charge (Q1/Q2) (Typ.) | Qg | VGS=-4V | 6.4 | nC |