SSM6L39TU

不推荐用于新设计

Small Low ON resistance MOSFETs

产品概要

Application Scope Power Management Switches / High-Speed Switching
Polarity N-ch + P-ch
Generation U-MOSⅢ / U-MOSⅢ
Internal Connection Independent
AEC-Q101 Qualified(*)
RoHS Compatible Product(s) (#) Available

*: For detail information, please contact to our sales.

封装

Toshiba Package Name SOT-363F (UF6)
Package Image 东芝 SSM6L39TU Small Low ON resistance MOSFETs产品 UF6 封装图片
Package Code SOT-363F
Pins 6
Mounting Surface Mount
Width×Length×Height
(mm)
2.0×2.1×0.7
Package Dimensions 查看
Land pattern dimensions 查看
Ultra Librarian® CAD model
(Symbol, Footprint and 3D model)
Download from UltraLibrarian<sup>®</sup> in your desired CAD format<br>(Note1)(Note2)

Download from UltraLibrarian® in your desired CAD format
(Note1)(Note2)

 Please refer to the link destination to check the detailed size.

(Note1)

Ultra Librarian® is a Registered trademark and CAD model library of EMA (EMA Design Automation, Inc.). CAD models (Symbol/Footprint /3D model) are provided by UltraLibrarian®. The footprints are generated based on the specifications of Ultra Librarian®.

(Note2)

Please note that the footprint dimensions may differ from the reference Land Pattern dimensions provided on our website.

绝对最大额定值

项目 符号 单位
Drain-Source voltage (Q1) VDSS 20 V
Gate-Source voltage (Q1) VGSS +/-10 V
Drain current (Q1) ID 1.6 A
Drain-Source voltage (Q2) VDSS -20 V
Gate-Source voltage (Q2) VGSS +/-8 V
Drain current (Q2) ID -1.5 A
Power Dissipation PD 0.5 W

电气特性

项目 符号 条件 单位
Gate threshold voltage (Q1) (Max) Vth - 1.0 V
Drain-Source on-resistance (Q1) (Max) RDS(ON) VGS=1.5V 247
Drain-Source on-resistance (Q1) (Max) RDS(ON) VGS=1.8V 190
Drain-Source on-resistance (Q1) (Max) RDS(ON) VGS=2.5V 139
Drain-Source on-resistance (Q1) (Max) RDS(ON) VGS=4V 119
Input capacitance (Q1) (Typ.) Ciss - 260 pF
Total gate charge (Q1) (Typ.) Qg VGS=4V 7.5 nC
Gate threshold voltage (Q2) (Max) Vth - -1.0 V
Drain-Source on-resistance (Q2) (Max) RDS(ON) VGS=-4V 213
Drain-Source on-resistance (Q2) (Max) RDS(ON) VGS=-2.5V 294
Drain-Source on-resistance (Q2) (Max) RDS(ON) VGS=-1.8V 430
Input capacitance (Q2) (Typ.) Ciss - 250 pF
Total gate charge (Q2) (Typ.) Qg VGS=-4V 6.4 nC

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Sep,2016

Apr,2025

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