2SJ680

停产产品

Power MOSFET (P-ch single)

数据表

2SJ680 数据表/日文[Jun,2008]PDF: 308KB

数据表

2SJ680 数据表/英文[Sep,2009]PDF: 197KB

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Catalog

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数据表

2SJ680 数据表/日文[Jun,2008]PDF: 308KB

数据表

2SJ680 数据表/英文[Sep,2009]PDF: 197KB

相关技术数据

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Electrical Characteristics: Power MOSFET Application Notes[Feb,2023]PDF: 1266KB

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Reverse Recovery Operation and Destruction of MOSFET Body Diode[Sep,2018]PDF: 472KB

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Catalog

Selection Guide MOSFETs 2025 Rev1.1[Sep,2025]PDF: 3987KB

产品概要

Polarity P-ch
Generation π-MOSⅤ
RoHS Compatible Product(s) (#) Please contact us.

封装

Toshiba Package Name New PW-Mold2
Package Image 东芝 2SJ680 Power MOSFET (P-ch single)产品 New PW-Mold2 封装图片
Pins 3
Mounting Through Hole
Width×Length×Height
(mm)		 6.5×5.5×2.3
Package Dimensions 查看

 Please refer to the link destination to check the detailed size.

绝对最大额定值

项目 符号 值 单位
Drain-Source voltage VDSS -200 V
Drain current ID -2.5 A

电气特性

项目 符号 条件 值 单位
Drain-Source on-resistance (Max) RDS(ON) |VGS|=10V 2.0 Ω
Input capacitance (Typ.) Ciss - 410 pF

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